Samsung’s 3nm Gate-All-Around (GAA) course of, 3GAE, growth is on monitor. The firm famous at present that its Process Design Kit (PDK) model 0.1 for 3GAE has been launched in April to assist prospects get an early begin on the design work and allow improved design competitiveness together with lowered turnaround time (TAT).
Compared to 7nm know-how, Samsung’s 3GAE course of is designed to supply as much as a 45 % discount in chip space with 50 % decrease energy consumption or 35 % larger efficiency. The GAA-based course of node is anticipated to be broadly adopted in next-generation purposes, reminiscent of cellular, community, automotive, Artificial Intelligence (AI) and IoT.
Conventional GAA primarily based on nanowire requires a bigger variety of stacks as a consequence of its small efficient channel width. On the opposite hand, Samsung’s patented model of GAA, MBCFET™ (Multi-Bridge-Channel FET), makes use of a nanosheet structure, enabling better present per stack.
While FinFET constructions should modulate the variety of fins in a discrete manner, MBCFET™ gives better design flexibility by controlling the nanosheet width. In addition, MBCFET™’s compatibility with FinFET processes means the 2 can share the identical manufacturing know-how and tools, which accelerates course of growth and manufacturing ramp-up. Samsung just lately taped out the 3GAE take a look at automobile design and can concentrate on enhancing its efficiency and energy effectivity going ahead.
Process know-how roadmap and superior packaging updates
Samsung’s roadmap consists of 4 FinFET-based processes from 7nm all the way down to 4nm that leverage excessive ultraviolet (EUV) know-how in addition to 3nm GAA, or MBCFET™.
In the second half of this 12 months, Samsung is scheduled to begin the mass manufacturing of 6nm course of units and full the event of 4nm course of. The product design of Samsung’s 5nm FinFET course of, which was developed in April, is anticipated to be accomplished within the second half of this 12 months and go below mass manufacturing within the first half of 2020.
Extensions of the corporate’s FD-SOI (FDS) course of and eMRAM along with an expanded set of state-of-the-art bundle options had been additionally unveiled at this 12 months’s Foundry Forum. Development of the successor to the 28FDS course of, 18FDS, and eMRAM with 1Gb capability can be completed this 12 months.
You can verify an infographic right here.
