Yangtze Memory Technologies plans to introduce the second technology of its in-house developed Xtacking 3D NAND structure, dubbed Xtacking 2.0, in August 2019, mentioned firm co-CTO Qiang Tang at a current GSA occasion held in Shanghai.
Yangtze Memory unveiled its Xtacking structure for 3D NAND flash reminiscence in 2018. The basis of Xtacking structure is the wafer bonding expertise developed by XMC for CMOS picture sensors, Tang indicated.
Yangtze Memory is scheduled to enter quantity manufacturing of 64-layer 3D NAND chips based mostly on its Xtacking structure within the fourth quarter of 2019, Tang famous. Tang additionally reiterated the corporate’s plans to maneuver on to the 128-layer technology in 2020.
In addition, Tang commented that demand for personalized NAND flash options can be strong. Yangtze has been constructing its expertise IP portfolio and is assured it’s going to present aggressive 3D NAND merchandise for a wide range of buyer wants.
