New HBM2E stacks eight 16Gb DRAM dies to realize 16GB package deal capability
and ensures a secure information switch velocity at 3.2Gbps
Samsung Electronics, the world chief in superior reminiscence expertise, right now introduced the market launch of ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximise excessive efficiency computing (HPC) techniques and assist system producers to advance their supercomputers, AI-driven information analytics and state-of-the-art graphics techniques in a well timed method.
“With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market,” mentioned Cheol Choi, government vp of Memory Sales & Marketing at Samsung Electronics. “Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace.”
Ready to ship twice the capability of the previous-generation 8GB HBM2 ‘Aquabolt’, the brand new Flashbolt additionally sharply will increase efficiency and energy effectivity to considerably enhance next-generation computing techniques. The 16GB capability is achieved by vertically stacking eight layers of 10nm-class (1y) 16-gigabit (Gb) DRAM dies on high of a buffer chip. This HBM2E package deal is then interconnected in a exact association of greater than 40,000 ‘through silicon via’ (TSV) microbumps, with every 16Gb die containing over 5,600 of those microscopic holes.
Samsung’s Flashbolt gives a extremely dependable information switch velocity of three.2 gigabits per second (Gbps) by leveraging a proprietary optimized circuit design for sign transmission, whereas providing a reminiscence bandwidth of 410GB/s per stack. Samsung’s HBM2E also can attain a switch velocity of 4.2Gbps, the utmost examined information price to this point, enabling as much as a 538GB/s bandwidth per stack in sure future functions. This would characterize a 1.75x enhancement over Aquabolt’s 307GB/s.
Samsung expects to start quantity manufacturing in the course of the first half of this yr. The firm will proceed offering its second-generation Aquabolt lineup whereas increasing its third-generation Flashbolt providing, and can additional strengthen collaborations with ecosystem companions in next-generation techniques because it accelerates the transition to HBM options all through the premium reminiscence market.
