New 8nm RF chip structure supplies as much as 35 % improve in energy effectivity and 35 % lower in logic space in comparison with 14nm RF
Samsung Electronics, a world chief in superior semiconductor know-how, at present introduces its latest radio frequency (RF) know-how based mostly on 8-nanometer (nm) course of.
This cutting-edge foundry know-how is anticipated to supply a ‘one chip solution,’ particularly for 5G communications with help for multi-channel and multi-antenna chip designs. Samsung’s 8nm RF platform extension is anticipated to increase the corporate’s management within the 5G semiconductor market from sub-6GHz to mmWave purposes.
Samsung’s 8nm RF course of know-how is the most recent addition to an already broad portfolio of RF-related options, together with 28nm- and 14nm-based RF. The firm has established its RF market management via the transport of greater than 500 million cell RF chips for premium smartphones since 2017.
“Through excellence in innovation and process manufacturing, we’ve reinforced our next-generation wireless communication offerings,” mentioned Hyung Jin Lee, Master of Foundry Technology Development Team at Samsung Electronics. “As 5G mmWave expands, Samsung’s 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices.”
Samsung’s New RFeFET™ Architecture
With continued scaling to superior nodes, digital circuits have improved considerably in efficiency, energy consumption, and space (PPA), whereas the analog/RF blocks haven’t loved such an enchancment as a consequence of degenerative parasitics akin to elevated resistance from slender line width. As a end result, most communications chips are likely to see degraded RF traits akin to deteriorated amplification efficiency of reception frequency and elevated energy consumption.
To overcome the analog/RF scaling challenges, Samsung has developed a singular structure unique to 8nm RF named RFextremeFET (RFeFET™) that may considerably enhance RF traits whereas utilizing much less energy. In comparability to 14nm RF, Samsung’s RFeFET™ dietary supplements the digital PPA scaling and restores the analog/RF scaling on the identical time, thereby enabling high-performance 5G platforms.
Samsung’s course of optimization maximizes channel mobility whereas minimizing parasitics. As the efficiency of RFeFET™ is enormously improved, the overall variety of transistors of RF chips and the realm of analog/RF blocks may be lowered.
Compared to 14nm RF, Samsung’s 8nm RF course of know-how supplies as much as a 35-percent improve in energy effectivity with a 35-percent lower within the RF chip space because of the RFeFET™ architectural innovation.
