Cutting-edge 2nm and 4nm course of nodes revealed, in addition to turnkey Samsung AI Solutions to fulfill rising AI demand
SAFE Forum and inaugural MDI Alliance workshop will run the day after SFF to foster stronger collaborations and talk about superior packaging designs
Samsung Electronics, a world chief in superior semiconductor expertise, in the present day unveiled its newest foundry improvements and outlined its imaginative and prescient for the AI period throughout Samsung Foundry Forum (SFF) U.S., an annual occasion held on the firm’s Device Solutions America headquarters in San Jose, California.
Under the theme “Empowering the AI Revolution,” Samsung introduced its strengthened course of expertise roadmap, together with two new cutting-edge nodes — SF2Z and SF4U — in addition to its built-in Samsung AI Solutions platform harnessing the distinctive strengths of its Foundry, Memory and Advanced Package (AVP) companies.
“At a time when numerous technologies are evolving around AI, the key to its implementation lies in high-performance, low-power semiconductors,” stated Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. “Alongside our proven GAA process optimized for AI chips, we plan to introduce integrated, co-packaged optics (CPO) technology for high-speed, low-power data processing, providing our customers with the one-stop AI solutions they need to thrive in this transformative era.”
The occasion featured shows from distinguished business thought leaders equivalent to Arm CEO Rene Haas and Groq CEO Jonathan Ross, who took the stage to emphasise the strong partnerships with Samsung in tackling new AI challenges. Around 30 companion corporations exhibited at cubicles, additional highlighting the dynamic collaboration throughout the U.S. foundry ecosystem.
Empowering Customer AI Solutions With State-of-the-Art Process Technology Roadmap
Samsung introduced two new course of nodes, SF2Z and SF4U, reinforcing its modern course of expertise roadmap.
The firm’s newest 2nm course of, SF2Z, incorporates optimized bottom energy supply community (BSPDN) expertise, which locations energy rails on the bottom of the wafer to get rid of bottlenecks between the ability and sign traces. Applying BSPDN expertise to SF2Z not solely enhances energy, efficiency and space (PPA) in comparison with SF2, the first-generation 2nm node, but in addition considerably reduces voltage drop (IR drop), enhancing the efficiency of HPC designs. Mass manufacturing of SF2Z is slated for 2027.
SF4U, however, is a high-value 4nm variant that gives PPA enhancements by incorporating optical shrink, with mass manufacturing scheduled for 2025.
Samsung reaffirmed that its preparations for SF1.4 (1.4nm) are progressing easily, with efficiency and yield targets on observe for mass manufacturing in 2027. Emphasizing its ongoing dedication to advancing past Moore, Samsung is actively shaping future course of applied sciences beneath 1.4nm by way of materials and structural improvements.
Continuously Advancing GAA Maturity
With the onset of the AI period, structural developments like gate-all-around (GAA) have develop into crucial to fulfill energy and efficiency calls for. At SFF, Samsung emphasised the maturity of its GAA expertise, a key technological enabler in empowering AI.
Entering its third 12 months of mass manufacturing, Samsung’s GAA course of is constantly demonstrating steady maturity in each yield and efficiency. Leveraging this gathered GAA manufacturing expertise, Samsung plans to mass produce its second-generation 3nm course of (SF3) within the second half of this 12 months and ship GAA on its upcoming 2nm course of.
Samsung’s GAA manufacturing has been steadily rising since 2022 and is poised to considerably broaden within the coming years.
Highlighting Cross-Company Collaborations for Turnkey Samsung AI Solutions
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