Samsung Receiving Industry’s First Global Recognition for

Samsung’s 512GB eUFS 3.Zero reminiscence to earn Carbon Footprint and Water Footprint Certifications from the globally accredited Carbon Trust

Samsung’s 1TB eUFS 2.1 and fifth-generation 512Gb V-NAND additionally to obtain Environmental Product Declaration labels from the Korean Ministry of Environment

Samsung Electronics, a world chief in superior reminiscence know-how, introduced that its 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.Zero will likely be awarded Carbon Footprint and Water Footprint Certifications from the extremely revered UK-based Carbon Trust throughout a ceremony on the British Embassy in Seoul, Korea later immediately. Samsung’s 512GB eUFS 3.Zero is the primary cell reminiscence within the business to be acknowledged by a world certifying group, which was made potential by the corporate’s intensive efforts to scale back carbon and water footprints.

The Carbon Trust is a globally accredited non-profit certification physique established by the British authorities to speed up the transfer to a sustainable, low-carbon economic system. Each certification by the Carbon Trust was made after a radical evaluation of the environmental impression of carbon emissions and water utilization earlier than and all through the manufacturing cycle, primarily based on worldwide requirements*.

“We are extremely pleased that our cutting-edge memory technologies not only demonstrate our capability to overcome more challenging process complexities, but also are recognized for their environmental sustainability,” stated Chanhoon Park, government vice chairman and head of Giheung Hwaseong Pyeongtaek Complex at Samsung Electronics. “Samsung will continue to create memory solutions that provide the highest levels of speed, capacity and power efficiency at extremely small geometries for end-users worldwide.”

Samsung’s Semiconductor Innovations Enable Sustainable Production

Based on the corporate’s fifth-generation (90+ layers) V-NAND, Samsung’s 512GB eUFS 3.Zero gives optimum velocity, energy effectivity and productiveness to ship twice the capability and a pair of.1 instances the sequential velocity of its fourth technology (64 layers) V-NAND-based 256GB eUFS 2.1, whereas requiring 30 % much less working voltage. Additionally, Samsung’s fifth-generation V-NAND makes use of a novel etching know-how that pierces greater than 90 cell layers in a single exact step. This permits the chip to have almost 1.5 instances extra stacked layers than the earlier technology and accommodate a 25-percent discount in chip dimension. Such improvements assist to attenuate the general enhance in carbon and water footprints for every V-NAND cell layer.

Samsung can also be being awarded Environmental Product Declaration (EPD) labels for its ‘1-terabyte (TB) eUFS 2.1’ and its ‘fifth-generation 512-gigabit (Gb) V-NAND’ by the Korean Ministry of Environment at immediately’s ceremony.

Samsung plans to actively broaden the adoption of its extremely sustainable, high-capacity premium reminiscence options into many extra flagship smartphones and additional strengthen world partnerships for its next-generation reminiscence applied sciences.

*PAS 2050 for carbon footprint and ISO 14046 for water footprint

[Reference] Samsung 512GB eUFS 3.Zero environmental footprint (Carbon Trust)

*13.Four kg CO₂ is similar to the quantity that’s absorbed by two 30-year-old pine timber in a 12 months   

[Reference] Samsung semiconductor options with environmental certifications