Samsung has launched the trade’s first reminiscence that correspond to the HBM2E specification. The firm’s new Flashbolt reminiscence stacks improve efficiency by 33% and supply double per-die in addition to double per-package capability. Samsung launched its HBM2E DRAMs at GTC, a becoming location since NVIDIA is without doubt one of the largest HBM2 shoppers because of their standard GV100 processor.
Samsung’s Flashbolt KGSDs (recognized good stacked die) are primarily based on eight 16-Gb reminiscence dies interconnected utilizing TSVs (via silicon vias) in an 8-Hi stack configuration. Every Flashbolt bundle contains a 1024-bit bus with a 3.2 Gbps knowledge switch velocity per pin, thus providing as much as 410 GB/s of bandwidth per KGSD.
Samsung positions its Flashbolt KGSDs for next-gen datacenter, HPC, AI/ML, and graphics functions. By utilizing 4 Flashbolt stacks with a processor that includes a 4096-bit reminiscence interface, builders can get 64 GB of reminiscence with a 1.64 TB/s peak bandwidth, one thing that will probably be an amazing benefit for capability and bandwidth-hungry chips. With two KGSDs they get 32 GB of DRAM with an 820 GB/s peak bandwidth.
| Samsung’s HBM2 Memory Comparison | ||||||||
| Flashbolt | Aquabolt | Flarebolt | ||||||
| Total Capacity | 16 GB | Eight GB | Eight GB | Four GB | Eight GB | Four GB | ||
| Bandwidth Per Pin | 3.2 Gb/s | 2.4 Gb/s | 2 Gb/s | 2 Gb/s | 1.6 Gb/s | 1.6 Gb/s | ||
| Number of DRAM ICs per Stack | 8 | 8 | 8 | 4 | 8 | 4 | ||
| DRAM IC Process Technology | ? | 20 nm | ||||||
| Effective Bus Width | 1024-bit | |||||||
| Voltage | ? | 1.2 V | 1.35 V | 1.2 V | ||||
| Bandwidth per Stack | 410 GB/s | 307.2 GB/s | 256 GB/s | 204.Eight GB/s | ||||
To improve DRAM switch velocity per pin to three.2 Gbps, Samsung in all probability needed to make use of varied strategies to cut back collateral clock interference between the 5000+ TSVs and guarantee clear indicators, but the corporate doesn’t talk about this in its present announcement. Last yr the corporate did disclose among the methods utilized by its Aquabolt HBM2 DRAMs to extend bandwidth per pin to 2.4 Gbps, so most of those strategies have in all probability developed in case of the Flashbolt.
In reality, Samsung’s announcement doesn’t state that that the corporate has began mass manufacturing of its Flashbolt HBM2E reminiscence, so it appears to be like like the corporate has completed improvement of the know-how, however will not be but prepared to start out shipments of such chips in mass portions.
Source: Samsung
