Samsung this week has unveiled its newest course of applied sciences roadmap on the firm’s Samsung Foundry Forum (SFF) U.S. The new plan covers the evolution of Samsung’s 2nm-class manufacturing nodes by means of 2027, together with a course of expertise with a bottom energy supply, re-emphasizing plans to deliver out a 1.4nm-class node in 2027, and the introduction of a ‘excessive worth’ 4nm-class manufacturing tech.
Samsung Foundry’s key bulletins for at the moment are clearly centered on the its 2nm-class course of applied sciences, that are set to enter manufacturing in 2025 and can span to 2027, when the corporate’s 1.4-nm class manufacturing node is ready to enter the scene. Samsung can also be including (or quite, renaming) one other 2nm-class node to their roadmap with SF2, which was beforehand disclosed by Samsung as SF3P and aimed toward high-performance gadgets.
“We have refined and improved the SF3P, resulting in what we now refer to as SF2,” a Samsung spokesperson informed AnandTech. “This enhanced node incorporates various process design improvements, delivering notable power, performance, and area (PPA) benefits.”
Samsung Foundry for Leading-Edge Nodes Announced on June 12, 2024 Compiled by AnandTech |
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HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | 2027 | ||
Process | SF3E | SF3 | SF2 (aka SF3P) |
SF2P/SF2X | SF2Z | SF1.4 | ||
FET | GAAFET | |||||||
Power Delivery | Frontside | Backside (BSPDN) | ? | |||||
EUV | 0.33 NA EUV | ? | ? | ? | ? |
This is one other instance of a rebranding of modern fabrication nodes within the current years by a serious chipmaker. Samsung Foundry just isn’t disclosing any particular PPA enhancements SF3P has over SF2, and for now’s solely stating in high-level phrases that will probably be a better-performing node than the deliberate SF3P.
Meanwhile, this week’s announcement additionally contains new info on Samsung’s subsequent batch of course of nodes, that are deliberate for 2026 and 2027. In 2026 Samsung can have SF2P, an additional refinement of SF2 which includes ‘sooner’ but much less dense transistors. That might be adopted up in 2027 with SF2Z, which provides bottom energy supply to the combo for higher and better high quality energy supply. In explicit, Samsung is targetting voltate drop (aka IR drop) right here, which is an ongoing concern in chip design.
Finally, SF1.4, a 1.4nm-class node, is on observe for 2027 as properly. Interestingly, nonetheless, it seems to be prefer it doesn’t function a bottom energy supply. Which, per present roadmaps, would have Samsung as the one foundry not utilizing BSPDN for his or her first 1.4nm/14Å-class node.
“We have optimized BSPDN and incorporated it for the first time in the SF2Z node we announced today,” the spokesperson informed us. “We will continue to refine this technology and apply it to future nodes, but we don’t have a specific timeline to share at this time.”
Chip Fab Roadmaps for Leading-Edge Nodes Data introduced throughout convention calls, occasions, press briefings and press releases. Compiled by AnandTech |
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HVM Start | 2023 | 2024 | 2025 | 2026 | 2027 | ||
Intel | Process | Intel 3 | Intel 20A | Intel 18A | Intel 14A | Intel 10A | |
FET | FinFET | RibbonFET (GAAFET) | |||||
Power | Frontside | PowerBy way of (BSPDN) | |||||
EUV | 0.33 NA EUV | 0.55 NA EUV + DSA | |||||
Samsung | Process | SF3E | SF3 | SF2 | SF2P/SF2X | SF2Z/SF1.4 | |
FET | GAAFET | ||||||
Power | Frontside | Backside/? | |||||
EUV | 0.33 NA EUV | ? | ? | ? | |||
TSMC | Process | N3E/N3P | N3S/N3X | N2 | A16 | A14 (?) | |
FET | FinFET | GAAFET | |||||
Power | Frontside | Super Power Rail (BSPDN) | |||||
EUV | 0.33 NA EUV | ? |
When in comparison with different contract fabs, Samsung’s roadmap is now roughly in keeping with the remaining with reference to ‘nanometer’ designations. Though absent additional technical disclosures…