Samsung Electronics Takes 3D Memory to New Heights with

New V-NAND breaks by means of present cell stacking limitation in 3D NAND with the trade’s first 100+ layer single-tier design for superior pace and energy effectivity

Starting with a 250GB SATA SSD now in manufacturing, Samsung plans to supply high-speed, high-capacity SSDs and eUFS options primarily based on its sixth-generation V-NAND

Samsung Electronics, the world chief in superior reminiscence expertise, right now introduced that it has begun mass producing 250-gigabyte (GB) SATA stable state drive (SSD) that integrates the corporate’s sixth-generation (1xx-layer) 256-gigabit (Gb) three-bit V-NAND for world PC OEMs. By launching a brand new technology of V-NAND in simply 13 months, Samsung has decreased the mass manufacturing cycle by 4 months whereas securing the trade’s highest efficiency, energy effectivity and manufacturing productiveness.

“By bringing cutting-edge 3D memory technology to volume production, we are able to introduce timely memory lineups that significantly raise the bar for speed and power efficiency,” mentioned Kye Hyun Kyung, govt vp of Solution Product & Development at Samsung Electronics. “With faster development cycles for next-generation V-NAND products, we plan to rapidly expand the markets for our high-speed, high-capacity 512Gb V-NAND-based solutions.”

The Only Single-stack 3D Memory Die With a 100+ Layer Design

Samsung’s sixth-generation V-NAND options the trade’s quickest information switch charge, capitalizing on the corporate’s distinct manufacturing edge that’s taking 3D reminiscence to new heights.

Utilizing Samsung’s distinctive ‘channel hole etching’ expertise, the brand new V-NAND provides round 40-percent extra cells to the earlier 9x-layer single-stack construction. This is achieved by constructing an electrically conductive mould stack comprised of 136 layers, then vertically piercing cylindrical holes from high to backside, creating uniform 3D cost entice flash (CTF) cells.

As the mould stack in every cell space will increase in peak, NAND flash chips are likely to grow to be extra susceptible to errors and browse latencies. To overcome such limitations, Samsung has included a speed-optimized circuit design that permits it to realize the quickest information switch pace, at beneath 450 microseconds (μs) for write operations and beneath 45μs for reads. Compared to the earlier technology, this represents a greater than 10-percent enchancment in efficiency, whereas energy consumption is decreased by greater than 15 p.c.

Thanks to this speed-optimized design, Samsung will be capable to supply next-generation V-NAND options with over 300 layers just by mounting three of the present stacks, with out compromising chip efficiency or reliability.

In addition, the variety of channel holes required to create a 256Gb chip density has decreased to 670 million holes from over 930 million with the earlier technology, enabling decreased chip sizes and fewer course of steps. This brings a greater than 20-percent enchancment in manufacturing productiveness.

Leveraging the high-speed and low-power options, Samsung plans to not solely broaden the attain of its 3D V-NAND into areas like next-generation cellular units and enterprise servers, but additionally into the automotive market the place excessive reliability is extraordinarily vital.

Following right now’s introduction of the 250GB SSD, Samsung plans to supply 512Gb three-bit V-NAND SSD and eUFS within the second half of this yr. The firm additionally expects to broaden manufacturing of higher-speed and greater-capacity sixth-generation V-NAND options at its Pyeongtaek (Korea) campus beginning subsequent yr to higher meet demand from world clients.

Reference: Samsung V-NAND Mass Production Timeline