512GB capability DDR5 module made attainable by an 8-layer TSV construction
HKMG materials reduces energy by 13 % whereas doubling the pace of DDR4
Samsung Electronics, the world chief in superior reminiscence know-how, at the moment introduced that it has expanded its DDR5 DRAM reminiscence portfolio with the business’s first 512GB DDR5 module primarily based on High-Okay Metal Gate (HKMG) course of know-how. Delivering greater than twice the efficiency of DDR4 at as much as 7,200 megabits per second (Mbps), the brand new DDR5 will probably be able to orchestrating probably the most excessive compute-hungry, high-bandwidth workloads in supercomputing, synthetic intelligence (AI) and machine studying (ML), in addition to information analytics purposes.
“Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development,” mentioned Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics. “By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond.”
“As the amount of data to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical inflection point for cloud datacenters, networks and edge deployments,” mentioned Carolyn Duran, Vice President and GM of Memory and IO Technology at Intel. “Intel’s engineering teams closely partner with memory leaders like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimized and compatible with our upcoming Intel Xeon Scalable processors, code-named Sapphire Rapids.”
Samsung’s DDR5 will make the most of extremely superior HKMG know-how that has been historically utilized in logic semiconductors. With continued cutting down of DRAM constructions, the insulation layer has thinned, resulting in the next leakage present. By changing the insulator with HKMG materials, Samsung’s DDR5 will be capable of cut back the leakage and attain new heights in efficiency. This new reminiscence may also use roughly 13% much less energy, making it particularly appropriate for datacenters the place vitality effectivity is changing into more and more vital.
The HKMG course of was adopted in Samsung’s GDDR6 reminiscence in 2018 for the primary time within the business. By increasing its use in DDR5, Samsung is additional solidifying its management in next-generation DRAM know-how.
Leveraging through-silicon by way of (TSV) know-how, Samsung’s DDR5 stacks eight layers of 16Gb DRAM chips to supply the biggest capability of 512GB. TSV was first utilized in DRAM in 2014 when Samsung launched server modules with capacities as much as 256GB.
Samsung is presently sampling totally different variations of its DDR5 reminiscence product household to prospects for verification and, in the end, certification with their modern merchandise to speed up AI/ML, exascale computing, analytics, networking, and different data-intensive workloads.
