Samsung Begins Mass Production of the Fastest Storage for

The new 512GB eUFS 3.1 shops 8K movies and large-size picture information

with out buffering

Samsung Electronics, the world chief in superior reminiscence know-how, at present introduced that it has begun mass producing the business’s first 512-gigabyte (GB) eUFS (embedded Universal Flash Storage) 3.1 to be used in flagship smartphones. Delivering 3 times the write pace of the earlier 512GB eUFS 3.Zero cellular reminiscence, Samsung’s new eUFS 3.1 breaks the 1GB/s efficiency threshold in smartphone storage.

“With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards,” stated Cheol Choi, govt vice chairman of Memory Sales & Marketing at Samsung Electronics. “The new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year.”

At a sequential write pace of over 1,200MB/s, Samsung 512GB eUFS 3.1 boasts greater than twice the pace of a SATA-based PC (540MB/s) and over ten instances the pace of a UHS-I microSD card (90MB/s). This means shoppers can benefit from the pace of an ultra-slim pocket book when storing huge information like 8K movies or a number of hundred large-size pictures of their smartphones, with none buffering. Transferring contents from an previous cellphone to a brand new system can even require significantly much less time. Phones with the brand new eUFS 3.1 will solely take about 1.5 minutes to maneuver 100GB of information whereas UFS 3.0-based telephones require greater than 4 minutes.

In phrases of random efficiency, the 512GB eUFS 3.1 processes as much as 60 p.c sooner than the extensively used UFS 3.Zero model, providing 100,000 enter/output operations per second (IOPS) for reads and 70,000 IOPS for writes.

Along with the 512GB possibility, Samsung can even have 256GB and 128GB capacities obtainable for flagship smartphones that can be launched later this 12 months.

Samsung started quantity manufacturing of fifth-generation V-NAND at its new Xi’an, China, line (X2) this month to completely accommodate storage demand all through the flagship and high-end smartphone market. The firm quickly plans to shift V-NAND quantity manufacturing at its Pyeongtaek line (P1) in Korea from fifth-generation to sixth-generation V-NAND to higher handle the rising demand.

Samsung Embedded Storage Memory Lineup