Samsung has kicked off mass manufacturing of its new, high-performance eUFS 3.1 storage modules. Designed primarily with high-end smartphones in thoughts, the embedded storage drives supply a few of Samsung’s quickest speeds but, with learn and write speeds much like these of midrange SSDs for PCs.
Initially, Samsung’s eUFS 3.1 household of gadgets will embrace a 512 GB drive rated for sequential learn speeds of as much as 2100 MB/s, sequential write velocity as much as 1200 MB/s, as nicely upwards of 100,000 IOPS and 70,000 IOPS for random reads and writes respectively. Eventually, the lineup may even achieve 128 GB and 256 GB drives to deal with inexpensive premium smartphones.
Samsung doesn’t disclose which of the brand new UFS 3.1 options are supported by its eUFS 3.1 512 GB drive, however given a significantly greater sequential write velocity — 1200 MB/s vs. 410 MB/s supplied by the previous-generation eUFS 3.zero gadgets — it’s greater than doubtless that the gadgets assist Write Booster pseudo-SLC caching.
Like different reminiscence and storage producers, Samsung publicizes quantity manufacturing of a brand new product after it delivers the primary batch to a buyer. But, whereas we had been hoping that this meant these new eUFS 3.1 drives could be utilized in Samsung’s new Galaxy S20 sequence of telephones, teardowns have already confirmed that these gadgets are utilizing 3.zero drives. So no matter Samsung’s latest storage modules are going into, it hasn’t been launched to customers fairly but.
Overall, with the addition of a 512 GB eUFS 3.1 drive to its lineup, Samsung now provides one of the vital complete households of embedded storage gadgets, with merchandise operating the total gamut of efficiency ranges and capacities.
Source: Samsung
