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Samsung Electronics has commenced mass production of system-on-chip (SoC) products with 10nm FinFET technology, according to the company.
Samsung’s new 10nm FinFET process (10LPE) adopts a 3D transistor structure with additional enhancements in both process technology and design enablement compared to its 14nm predecessor, allowing an up to 30% increase in area efficiency with 27% higher performance or 40% lower power consumption. In order to overcome scaling limitations, cutting edge techniques such as triple-patterning to allow bi-directional routing are also used to retain design and routing flexibility from prior nodes, the company noted.
Following the introduction of Samsung’s first-generation 10LPE, its second generation process (10LPP) with performance boost is targeted for mass production in the second half of 2017, the company indicated.
Through close collaboration with customers and partners, Samsung also aims to cultivate a robust 10nm foundry ecosystem that includes reference flow verification, IPs and libraries. Production level process design kits (PDK) and IP design kits are currently available for design starts.
SoCs with 10nm process technology will be used in digital devices launching in early 2017 and are expected to become more widely available throughout 2017, Samsung said.
"The industry’s first mass production of 10nm FinFET technology demonstrates our leadership in advanced process technology," said Jong Shik Yoon, executive VP and head of Samsung’s foundry business, in a statement.
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