EUV-based 1st-gen 10nm-class DRAM (D1x) has accomplished its buyer evaluations;
EUV to be totally deployed from 4th-gen 10nm-class DRAM (D1a) subsequent yr
Samsung Electronics, the world chief in superior reminiscence expertise, as we speak introduced that it has efficiently shipped a million of the business’s first 10nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based mostly on excessive ultraviolet (EUV) expertise. The new EUV-based DRAM modules have accomplished world buyer evaluations, and can open the door to extra cutting-edge EUV course of nodes to be used in premium PC, cellular, enterprise server and datacenter functions.
“With the manufacturing of our new EUV-based DRAM, we’re demonstrating our full dedication towards offering revolutionary DRAM options in assist of our world IT clients,” stated Jung-bae Lee, government vice chairman of DRAM Product & Technology at Samsung Electronics. “This major advancement underscores how we will continue contributing to global IT innovation through timely development of leading-edge process technologies and next-generation memory products for the premium memory market.”
Samsung is the primary to undertake EUV in DRAM manufacturing to beat challenges in DRAM scaling. EUV expertise reduces repetitive steps in multi-patterning and improves patterning accuracy, enabling enhanced efficiency and better yields in addition to shortened improvement time.
EUV might be totally deployed in Samsung’s future generations of DRAM, beginning with its fourth-technology 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to start quantity manufacturing of D1a-based DDR5 and LPDDR5 subsequent yr, which might double manufacturing productiveness of the 12-inch D1x wafers.
In line with the enlargement of the DDR5/LPDDR5 market subsequent yr, the corporate will additional strengthen its collaboration with main IT clients and semiconductor distributors on optimizing commonplace specs, because it accelerates the transition to DDR5/LPDDR5 all through the reminiscence market.
To higher deal with the rising demand for next-generation premium DRAM, Samsung will begin the operation of a second semiconductor fabrication line in Pyeongtaek, South Korea, inside the second half of this yr.
Timeline of Samsung DRAM Milestones
Date | Samsung DRAM Milestones |
2021 (TBD) | 4th-gen 10nm-class (1a) EUV-based 16Gb DDR5/LPDDR5 mass manufacturing |
March 2020 | 4th-gen 10nm-class (1a) EUV-based DRAM improvement |
September 2019 | Third-gen 10nm-class (1z) 8Gb DDR4 mass manufacturing |
June 2019 | 2nd-gen 10nm-class (1y) 12Gb LPDDR5 mass manufacturing |
March 2019 | Third-gen 10nm-class (1z) 8Gb DDR4 improvement |
November 2017 | 2nd-gen 10nm-class (1y) 8Gb DDR4 mass manufacturing |
September 2016 | 1st-gen 10nm-class (1x) 16Gb LPDDR4/4X mass manufacturing |
February 2016 | 1st-gen 10nm-class (1x) 8Gb DDR4 mass manufacturing |
October 2015 | 20nm (2z) 12Gb LPDDR4 mass manufacturing |
December 2014 | 20nm (2z) 8Gb GDDR5 mass manufacturing |
December 2014 | 20nm (2z) 8Gb LPDDR4 mass manufacturing |
October 2014 | 20nm (2z) 8Gb DDR4 mass manufacturing |
February 2014 | 20nm (2z) 4Gb DDR3 mass manufacturing |
February 2014 | 20nm-class (2y) 8Gb LPDDR4 mass manufacturing |
November 2013 | 20nm-class (2y) 6Gb LPDDR3 mass manufacturing |
November 2012 | 20nm-class (2y) 4Gb DDR3 mass manufacturing |
September 2011 | 20nm-class (2x) 2Gb DDR3 mass manufacturing |
July 2010 | 30nm-class 2Gb DDR3 mass manufacturing |
February 2010 | 40nm-class 4Gb DDR3 mass manufacturing |
July 2009 | 40nm-class 2Gb DDR3 mass manufacturing |