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Qualcomm, Samsung collaborate on 10nm for Snapdragon 83…

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Qualcomm, Samsung collaborate on 10nm for Snapdragon 835 mobile chips
Press release; Jessie Shen, DIGITIMES [Friday 18 November 2016]

Qualcomm and Samsung Electronics have extended their tie to manufacture Qualcomm’s Snapdragon 835 mobile chips with Samsung’s 10nm FinFET process technology, according to the companies.

In October, Samsung announced mass production of 10nm FinFET technology. Compared to its 14nm FinFET predecessors, Samsung’s 10nm technology allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption.

Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs, the companies said. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.

Snapdragon 835 is in production now and expected to ship in commercial devices in the first half of 2017, according to the companies. Snapdragon 835 follows the Snapdragon 820/21 processor, which has over 200 designs in development.

"We are excited to continue working together with Samsung in developing products that lead the mobile industry," said Keith Kressin, senior VP of product management for Qualcomm Technologies. "Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices."

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Categories: Bits + chips IC design, distribution IC manufacturing Mobile + telecom Mobile components

Tags: 10nm mobile Qualcomm Samsung Snapdragon

Topics: The 10nm competition

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