The opening ceremony was marked by keynote addresses and remarks by NXP executives plus federal, state and native authorities officers, together with:
- Arizona Senators Kyrsten Sinema and Martha McSally
- U.S. Representative Greg Stanton
- Arizona Governor Doug Ducey
- City of Chandler Mayor Kevin Hartke
- U.S. Department of Commerce Deputy Under Secretary for International Trade Joseph Semsar
- Ambassador of the Kingdom of the Netherlands to the United States Andre Haspels
In his keynote deal with, Kurt Sievers, NXP CEO mentioned: “Today marks a critical milestone for NXP. By building this incredible facility and tapping key talent in Arizona, we are able to bring focus to GaN technology as part of driving the next generation of 5G base station infrastructure.”
Gallium Nitride: The new gold customary for 5G
With 5G, the density of RF options required per antenna has exponentially elevated – but sustaining the identical field dimension and decreasing energy consumption is necessary. GaN energy transistors have emerged as the brand new gold customary to deal with these dueling necessities, delivering vital enhancements in each energy density and effectivity.
Nearly 20 years of GaN improvement experience and intensive wi-fi communication business data uniquely place NXP to guide this subsequent wave of mobile enlargement for 5G. The firm has deeply optimized its GaN know-how to enhance the electron trapping within the semiconductor to ship excessive effectivity and acquire with best-in-class linearity, all of which is targeted on serving NXP prospects with the best high quality GaN system manufacturing.
Joakim Sorelius, Head of Development Unit Networks at Ericsson, a longstanding NXP buyer, commented: “We strive to deliver industry leading products that provide maximum value to our customers, where power amplifiers play an important part of the radio technology. Similar to Ericsson’s recent US investments, we are pleased to see NXP’s investments in the U.S. semiconductor process development with the continuous focus on improving RF system performance for future high demanding radio networks.”
State-of-the-art fab attracts on NXP’s early GaN innovation and complete high quality mindset
NXP’s strategic transfer to construct an inner GaN fab was pushed by its potential to attain greater efficiency advantages by way of leveraging its core competency in mobile infrastructure design, confirmed observe report for high-volume manufacturing and consistency and management in complete high quality processes.
“I am excited by the opening of our new facility in Chandler as it underscores NXP’s decades-long commitment to GaN and the communications infrastructure market,” mentioned Paul Hart, Executive Vice President and GM of the Radio Power Group at NXP. “I would like to thank our customers for their collaboration throughout the years and the entire NXP team that has been instrumental in creating the world’s most advanced RF GaN fab, which is designed and ready to scale to 6G and beyond.”
The fab is about to ramp rapidly with NXP leveraging its Chandler-based workforce and their long-standing experience in compound semiconductor manufacturing. Arizona Governor Doug Ducey added: “With this new state-of-the-art manufacturing facility in Chandler, Arizona is set to expand its reputation as a high-tech manufacturing hub and a pioneer in 5G innovation. We’re grateful to NXP for bringing more jobs and investment to our state.”
The inner manufacturing facility will function an innovation hub that facilitates collaboration between the fab and NXP’s…
