Goke Microelectronics Launches Toshiba XL-Flash Based NVMe

As the trade’s main supplier of SSD controllers and storage options, Goke Microelectronics was invited to the 2019 Flash Memory Summit to reveal an ultra-low latency NVMe SSD primarily based on Toshiba Memory’s XL-FLASH reminiscence. One 12 months in the past, Toshiba Memory introduced XL-FLASH on the 2018 Flash Memory Summit, promising to make use of ultra-low latency 3D SLC flash to cut back learn latency to 5μs, which is equal to 1/10th of learn latency of 3D TLC NAND.

Goke 2311-series drives are primarily based on the 2311 SSD controller and are paired with Toshiba Memory’s XL-FLASH reminiscence. The prototype of 2311-series drives have applied an total 4K random learn latency below 20μs and the ultimate drives will provide a 4K random learn latency in lower than 15μs. Goke 2311-series drives help as much as four TB capability with a most write bandwidth of 1 GB/s and browse bandwidth of three GB/s via a PCIe Gen Three x4 interface. They can even help SM2/3/four and SHA-256/AES-256 with built-in safety engines.

“Toshiba Memory is very pleased to see the successful integration of Toshiba Memory’s XL-FLASH product with Goke’s products. The low-latency characteristic has been demonstrated on Goke’s flagship NVMe-SSD controller,” mentioned Hiroo Ota, Technology Executive, Memory Application Engineering, Toshiba Memory Corporation.

Goke 2311 drives will probably be anticipated to be in manufacturing in 2020.